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As in CdS, there are two effects of applied E on DMF in GaAs: an isotropic electrostatic ionization of a very shallow precursor state at high E, and a highly anisotropic suppression of the initial capture of radiolysis electrons at low E. Unlike in CdS, the shallow state is not stable, but quickly de-excites into the bond-centred Mu* state, whose amplitude mirrors that of the diamagnetic component as a function of E.