Until now it has always been assumed that the muon could be
considered an extremely dilute impurity, inserted one at a time
into a sample without much affecting the bulk of the sample, and
certainly not beyond the immediate vicinity of the muon.
We now know that the electrons generated along the muon
track do interact with the muon on time scales
important to .It is probable that in all insulators, including
semiconductors, at least some of the muonium results from
the delayed formation process.
There are two principal concerns related to this.
First, there is the question of how much the muon and muonium
signals in various (insulating) materials are affected
by direct interaction with the stray electrons.
For both muons and muonium, the most obvious affect would be
a contribution to the relaxation rate of the polarization function.
Second, the bulk properties of the sample in the vicinity of
these stray electrons may also be affected, and have an
indirect influence on the muon or muonium signals.
In both situations it is possible that a misleading result
could be obtained in the measurement of other unrelated
phenomena.
At the present time neither of these potential problems
can be ruled out.
More electric field experiments on a variety of
``conventional" samples will be necessary to determine
the circumstances under which such effects may safely be
ignored, but until such time that this is fully understood,
practitioners of in insulators should bear this in mind.